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Surface and Interface 2002S2-002 Photoemission study on interfacial reaction of Ti/n-GaN Takayuki Naono, Jun Okabayashi, Satoshi Toyoda, Hiroshi Fujioka, Masaharu Oshima, and Hiroshi
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Document Date: 2010-01-05 10:30:35


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City

Ti / /

Company

Japan 1 Sumitomo Chemical Co. / /

Country

Japan / /

Currency

pence / /

Facility

The University of Tokyo / Photon Factory / /

IndustryTerm

metal / higher binding energy / electronic devices / chemical reaction / photon energy / energy-band / chemical states / chemical shift / metal-organic chemical vapor deposition / lower binding energy side / satellite structures / /

MusicGroup

Valence / /

OperatingSystem

Fermi / /

Organization

University of Tokyo / Hiroshi Hamamatsu1 Department of Applied Chemistry / /

Person

Satoshi Toyoda / Takayuki Naono / Jun Okabayashi / Hiroshi Fujioka / Masaharu Oshima / /

/

Technology

radiation / spectroscopy / x-ray / chemical vapor deposition / /

SocialTag