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Condensed matter physics / Atomic physics / Spectroscopy / Photoemission spectroscopy / Semiconductor device fabrication / Work function / Core electron / Chemical state / Titanium nitride / Physics / Chemistry / Emission spectroscopy


Photon Factory Activity Report 2010 #28 Part BSurface and Interface 2C/2008S2-003 Thermal stability of TiN/HfSiON gate stack structures studied by synchrotron-radiation photoemission spectroscopy
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Document Date: 2012-01-30 04:32:45

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City

Tokyo / /

Company

N O Ti Hf / /

Country

Japan / /

Currency

pence / /

/

Facility

The University of Tokyo / Photon Factory / /

IndustryTerm

TiN metal gate electrode / chemical bonding states / ambient gas mixture / metal gate layer / metal gate / nano-scale devices / metal/high-k systems / photon energy / device applications / energy resolution / Chemical state / metal-oxidesemiconductor / /

Organization

High Energy Accelerator Research Organization / University of Tokyo / Tokyo / Department of Applied Chemistry / /

RadioStation

Core / /

Technology

radiation / spectroscopy / dielectric / /

SocialTag