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Emission spectroscopy / Photoemission spectroscopy / Atomic physics / High-k dielectric / Core electron / Electron / Physics / Chemistry / Spectroscopy


Photon Factory Activity Report 2006 #24 Part BSurface and Interface 2C/2005S2-002 Analysis of x-ray irradiation effect in high-k gate dielectrics by time-dependent
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Document Date: 2010-01-05 10:33:37


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City

Tokyo / /

Country

Japan / /

Currency

pence / /

/

Facility

Koji USUDA The University of Tokyo / Photon Factory / /

IndustryTerm

lower binding energy / higher binding energy / chemical vapour deposition / metal oxide semiconductor / /

Organization

High-Energy Accelerator Research Organization / University of Tokyo / Tokyo / Japan Science and Technology Agency / /

RadioStation

Core / /

Technology

semiconductor / radiation / spectroscopy / CVD / dielectric / x-ray / /

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