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Power electronics / Integrated gate-commutated thyristor / Thyristor / Gate turn-off thyristor / Power semiconductor device / Insulated gate bipolar transistor / Diode / Crowbar / Ignitron / Electromagnetism / Electrical engineering / Electronics


Document Date: 2012-06-24 08:33:21

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City

Berlin / Dortmund / /

Company

kA 6 4 kA 2 kA IGBT Press / Discharge Switch I. Thyristor INTRODUCTION Semiconductor / ABB Switzerland Ltd / J. Waldmeyer ABB Switzerland Ltd / Hertz / /

Country

Germany / /

IndustryTerm

active armor applications / end-users equipment / metal oxide varistor / 120mm devices / power devices / place devices / semiconductor devices / thyristor technology / power semiconductor devices / equipment maker / thyristor devices / environmental and medical applications / reverse conducting devices / shot applications / high energy / adapted standard products / pulsed power applications / thermal management / individual devices / large magnetic forming equipment / energy / high energy demand / /

Person

G. Buderer / V / Blocking Voltage Max / /

Position

driver / DEVICE TECHNOLOGY Forward / kV Pulse Current Forward / s Driver / Forward / mm Forward / /

Product

Datasheet 5STP 57U4200 A. Welleman / GTOLike / /

ProgrammingLanguage

RC / /

Technology

semiconductor / heading Device Technology / IGCT technology / Bipolar Transistor / semiconductor devices / switch using IGCT technology / thyristor technology / Device technologies / /

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