PHYSICS-BASED MODELING OF NPT AND PT IGBTS AT DEEP CRYOGENIC TEMPERATURES A. Caiafa, A. Snezhko*, J.L. Hudgins†, E. Santi, R. Prozorov*, and P.R. Palmer‡** Department of Electrical Engineering University of South Car

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Date: 2011-01-11 23:51:49 Power electronics Semiconductor devices Insulated gate bipolar transistor Semiconductors Transistor Snubber Gate turn-off thyristor Thyristor Diode Electrical engineering Electromagnetism Electronic engineering		PHYSICS-BASED MODELING OF NPT AND PT IGBTS AT DEEP CRYOGENIC TEMPERATURES A. Caiafa, A. Snezhko, J.L. Hudgins†, E. Santi, R. Prozorov, and P.R. Palmer‡** Department of Electrical Engineering University of South Car Add to Reading List Source URL: cmp.physics.iastate.edu Download Document from Source Website File Size: 493,16 KB Share Document on Facebook

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