INSTYTUT TECHNOLOGII MATERIA£ÓW ELEKTRONICZNYCH Institute of Electronic Materials Technology – Warsaw International Forum on Science and Technology of Crystal Growth March, Sendai, Japan JAN CZOCHRALSKI AC

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A THERMAL ELASTIC MODEL FOR DIRECTIONAL CRYSTAL GROWTH WITH WEAK ANISOTROPY JINBIAO WU∗ , C. SEAN BOHUN† , AND HUAXIONG HUANG‡ Abstract. In this paper we present a semi-analytical thermal stress solution for direct

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Predicting material parameters for intrinsic point defect diffusion in Silicon Crystal Growth Michael Griebel1, Lukas Jager2 and Axel Voigt3 1 Institut für Angewandte Mathematik, Universität Bonn, Wegelerstr. 6, 53115

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Crystal Growth 101 Solutions for Crystal Growth Table of Contents Pages

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Computing the crystal growth rate by the interface pinning method Ulf R. Pedersen, Felix Hummel, and Christoph Dellago Citation: The Journal of Chemical Physics 142, ); doi: View online: htt

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Beulah Newsletter Spring 2009 From the Editors: An amazing winter is moving on and a new season of growth and renewal begins. We want to encourage everyone to participate in Beulah’s fun

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• Geography of Michigan
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Solid earth sciences Iron snow, crystal floats, and inner-core growth: modes of core solidification and implications for dynamos in

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Speaker: Yves Krüger Fluid inclusion liquid-vapour homogenisation Fluid inclusions in stalagmites form during crystal growth and thus contain relicts of the former calcite precipitating drip waters. The density of the e

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CINT PublicationsY. Sun, S. F. Cheng, G. Chen, R. F. Hicks, J. G. Cederberg, and R. M. Biefeld, “The effect of antimony in the growth of indium arsenide quantum dots in gallium arsenide (001),” J. Appl. Ph

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CINT publicationsPublished: O. Anderoglu, X. Zhang and A. Misra, "Thermal stability of sputtered Cu films with nanoscale growth twins", Journal of Applied Physics, v.103, pO. Anderoglu, A. Misra,

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