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Measurement / Bipolar junction transistor / Capacitance / Transistor / Voltage / Current density / Physics / Physical quantities / Electromagnetism


Modeling of charge and collector field in silicon-based bipolar transistors H. Tran and M. Schroter Chair for Electron Devices and Integrated Circuits University of Technology Dresden, Germany [removed]
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Document Date: 2010-03-19 15:38:38

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File Size: 325,44 KB

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City

Boston / /

Company

Ge / /

Country

Germany / /

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Facility

Integrated Circuits University of Technology Dresden / /

IndustryTerm

process technology / to other profiles • 1D device / /

Organization

Electron Devices and Integrated Circuits University of Technology Dresden / /

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Position

collector / Base-collector / non-depleted collector / collector field modeling Investigated process technology Investigated process technology / collector region / /

Technology

collector field modeling Investigated process technology / simulation / WLAN / Integrated Circuits / Investigated process technology / field modeling Investigated process technology Investigated process technology / /

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http /

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