![](/pdf-icon.png) Date: 2017-10-16 22:17:26
| | Reducing Gate-Driven Leakage in 2D Semiconductors: Two-dimensional materials such as graphene and MoS2 have a wide range of bandgaps and effective masses, making them suitable for many different applications including mAdd to Reading ListSource URL: btbmarketing.comDownload Document from Source Website File Size: 928,80 KBShare Document on Facebook
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