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Spectroscopy / Crystallographic defects / Deep-level transient spectroscopy / Semiconductor device fabrication / Annealing / Doping / Dislocation / Nitrogen / Semiconductor / Chemistry / Materials science / Matter


Microsoft Word - 42092_0_art_1_j2r5v9.doc
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Document Date: 2008-04-15 16:12:41

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File Size: 372,21 KB

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City

Sheffield / Oxford / /

Company

MEMC Electronic Materials Inc. / Topsil Semiconductor Materials A/S / 3M / Electronic Materials SpA / /

Country

United Kingdom / Italy / /

Facility

University of Oxford / Engineering Research Institute / Sheffield Hallam University / /

IndustryTerm

power devices / activation energy / energy / /

Organization

Department of Materials / Sheffield Hallam University / University of Oxford / UK Materials and Engineering Research Institute / /

Product

ntd / FZSi / Cz-Si / /

ProgrammingLanguage

C / /

Technology

spectroscopy / semiconductors / FLOG algorithm / /

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