11![SISPAD 2012, September 5-7, 2012, Denver, CO, USA Simulating the Random Dopant Effect: A New ThreeDimensional Monte Carlo Approach Kangliang Wei, Xiaoyan Liu*, Gang Du Egley James SISPAD 2012, September 5-7, 2012, Denver, CO, USA Simulating the Random Dopant Effect: A New ThreeDimensional Monte Carlo Approach Kangliang Wei, Xiaoyan Liu*, Gang Du Egley James](https://www.pdfsearch.io/img/a37857d3fff72841b5e8e6b06d63502c.jpg) | Add to Reading ListSource URL: in4.iue.tuwien.ac.atLanguage: English - Date: 2013-02-12 08:39:10
|
---|
12![SISPAD 2012, September 5-7, 2012, Denver, CO, USA Analytical Model for the Threshold Voltage Variability due to Random Dopant Fluctuations in Junctionless FETs Antonio Gnudi, Susanna Reggiani, Elena Gnani, Giorgio Bacca SISPAD 2012, September 5-7, 2012, Denver, CO, USA Analytical Model for the Threshold Voltage Variability due to Random Dopant Fluctuations in Junctionless FETs Antonio Gnudi, Susanna Reggiani, Elena Gnani, Giorgio Bacca](https://www.pdfsearch.io/img/53a2ce628bc54b52a82d2f891f23e2eb.jpg) | Add to Reading ListSource URL: in4.iue.tuwien.ac.atLanguage: English - Date: 2013-02-12 08:39:13
|
---|
13![SISPAD 2012, September 5-7, 2012, Denver, CO, USA A TCAD Study of Substrate Dopant for Extremely Thin SOI MOSFETs with Ultra-Thin Buried Oxide Hao WU, Xiaodong TONG, Miao XU, Weiping XIAO, Binneng WU, Huilong ZHU, Qingq SISPAD 2012, September 5-7, 2012, Denver, CO, USA A TCAD Study of Substrate Dopant for Extremely Thin SOI MOSFETs with Ultra-Thin Buried Oxide Hao WU, Xiaodong TONG, Miao XU, Weiping XIAO, Binneng WU, Huilong ZHU, Qingq](https://www.pdfsearch.io/img/2e25736ebb400ab789732d2e1d93a2ec.jpg) | Add to Reading ListSource URL: in4.iue.tuwien.ac.atLanguage: English - Date: 2013-02-12 08:39:03
|
---|
14![SISPAD 2012, September 5-7, 2012, Denver, CO, USA 3D simulations of random dopant induced threshold voltage variability in inversion–mode In0.53Ga0.47As GAA MOSFETs N. Seoane, A. Garcia–Loureiro, E. Comesa˜na, R. V SISPAD 2012, September 5-7, 2012, Denver, CO, USA 3D simulations of random dopant induced threshold voltage variability in inversion–mode In0.53Ga0.47As GAA MOSFETs N. Seoane, A. Garcia–Loureiro, E. Comesa˜na, R. V](https://www.pdfsearch.io/img/4094a7deee0c3e4365dae1f3d4796ab6.jpg) | Add to Reading ListSource URL: in4.iue.tuwien.ac.atLanguage: English - Date: 2013-02-12 08:39:09
|
---|
15![EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH Addendum to the ISOLDE and Neutron Time-of-Flight Committee EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH Addendum to the ISOLDE and Neutron Time-of-Flight Committee](https://www.pdfsearch.io/img/3c83756a865441394405d49c0007fb71.jpg) | Add to Reading ListSource URL: joao.web.cern.chLanguage: English - Date: 2014-03-26 16:28:59
|
---|
16![N-type semiconductor N-type semiconductor N-type semiconductors are a type of extrinsic semiconductor where the dopant atoms are capable of providing extra conduction electrons to the host material (e.g. phosphorus in s N-type semiconductor N-type semiconductor N-type semiconductors are a type of extrinsic semiconductor where the dopant atoms are capable of providing extra conduction electrons to the host material (e.g. phosphorus in s](https://www.pdfsearch.io/img/74d1f51b5708de72ee83ccb3fe3727ca.jpg) | Add to Reading ListSource URL: www.saylor.orgLanguage: English - Date: 2013-03-20 16:12:01
|
---|
17![SIMS Analytics of Dopants, Impurities and Matrix Compositions Main Applications • Quantification of dopants and impurities SIMS Analytics of Dopants, Impurities and Matrix Compositions Main Applications • Quantification of dopants and impurities ](https://www.pdfsearch.io/img/121d474747a083cc6a3fbf1c66308cce.jpg) | Add to Reading ListSource URL: www.rtg-berlin.deLanguage: English - Date: 2014-07-30 11:10:47
|
---|
18![CMDD1 - High Power Diode Pumped 2 µm Laser Operation of Tm:Lu2O3 CMDD1 - High Power Diode Pumped 2 µm Laser Operation of Tm:Lu2O3](https://www.pdfsearch.io/img/8d35f5d9dce0fa27f3ca378eb6f03846.jpg) | Add to Reading ListSource URL: www.mirsurg.euLanguage: English - Date: 2012-02-07 03:02:42
|
---|
19![Journal of Crystal Growth–117 Numerical investigation of the influence of EM-fields on fluid motion and resistivity distribution during floating-zone growth of large silicon single crystals a Journal of Crystal Growth–117 Numerical investigation of the influence of EM-fields on fluid motion and resistivity distribution during floating-zone growth of large silicon single crystals a](https://www.pdfsearch.io/img/5fdde2f060cf902cb49bf9e861057d29.jpg) | Add to Reading ListSource URL: www.mhd-crystal.lvLanguage: English - Date: 2003-02-27 08:19:21
|
---|
20![Drift and Diffusion of carriers In an electric field, the current of charged carriers is controlled by both Drift and Diffusion of carriers In an electric field, the current of charged carriers is controlled by both](https://www.pdfsearch.io/img/a6c7bc88cdc08150c4fb9aced0f17180.jpg) | Add to Reading ListSource URL: nanofab.caltech.eduLanguage: English - Date: 2013-10-01 19:04:08
|
---|