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Semiconductor device fabrication / Superhard materials / Transistors / Ceramic materials / Atomic layer deposition / High-k dielectric / Ruthenium(IV) oxide / Silicon dioxide / Titanium nitride / Chemistry / Matter / Electronic engineering


Photon Factory Activity Report 2009 #27 Part BSurface and Interface 2C/2008S2003 Interfacial reactions for Ru metal-electrode/HfSiON gate stack structures studied
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Document Date: 2010-12-27 22:22:07


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