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Thin film deposition / Electronic engineering / High-k dielectric / Transistors / Ceramic materials / Gate dielectric / Atomic layer deposition / Annealing / Equivalent oxide thickness / Chemistry / Materials science / Electromagnetism


Photon Factory Activity Report 2008 #26 Part BSurface and Interface 2C/2005S2-002 Control of oxidation and reduction in HfSiON/Si through N2 exposure Hiroyuki KAMADA*1, Tatsuhiko TANIMURA1, Satoshi TOYODA1-3, Hir
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Document Date: 2010-01-05 10:36:03


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