First Page | Document Content | |
---|---|---|
![]() Date: 2005-02-05 00:30:36Electronics Semiconductor devices High-voltage direct current Thyristor Gate turn-off thyristor ETO Integrated gate-commutated thyristor Power semiconductor device Insulated gate bipolar transistor Power electronics Electromagnetism Electrical engineering | Source URL: scholar.lib.vt.eduDownload Document from Source WebsiteFile Size: 2,53 MBShare Document on Facebook |
![]() | Session Title: [TuC3] 11 : Motor Control and Drives (3) Date:DocID: 1gyjw - View Document |
![]() | The next stage in power semiconductors LESLIE LANGNAU, Associate Editor Recent design innovations have resulted in a new power semiconductor that can switch with the speed of an Insulated Gate Bipolar Transistor and condDocID: 107o9 - View Document |
![]() | PDF DocumentDocID: ngk9 - View Document |
![]() | Current Sharing and Redistribution in High Power IGBT Modules Dissertation submitted to the University of Cambridge for the Degree of Doctor of PhilosophyDocID: bV3d - View Document |
![]() | ABB Semiconductors AG Power Electronics For Very High Power ApplicationsDocID: 2eYG - View Document |