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Power electronics / Semiconductor devices / Gallium nitride / Nitrides / Field-effect transistor / MOSFET / Transistor / Depletion and enhancement modes / High electron mobility transistor / Chemistry / Technology / Electrical engineering


1 AL GaN Technology Overview RI
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Document Date: 2014-06-24 07:16:10


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File Size: 1,03 MB

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Company

Efficient Power Conversion Corporation / International Rectifier Corporation / Matsushita / Panasonic / Nitronex Corporation / Eudyna Corporation / /

Country

Japan / /

Currency

USD / /

Event

Product Release / /

IndustryTerm

power metal oxide silicon field effect transistor / gate metal / enhancement-mode devices / metal layer / metal gate / twodimensional electron gas / ways devices / electron gas / minority-carrier counterparts / cascode device / d-mode devices / power conversion systems / power devices / manufacturing infrastructure / silicon manufacturing technology / e-mode / majority-carrier device / minority carrier conduction / power conversion applications / e-mode device / enhancement-mode device / majoritycarrier devices / cascode solutions / stronger chemical bonds / chemical bonds / Depletion-mode devices / /

Organization

EPC / /

Person

David Reusch / Alex Lidow / Johan Strydom / /

Position

e-mode Gate Source GaN Forward / /

Product

GaN / /

Technology

semiconductor / bipolar transistor / 1 AL GaN Technology / semiconductors / gate GaN Technology / power devices GaN Technology / dielectric / radio frequency / silicon manufacturing technology / /

URL

http /

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