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Inorganic compounds / Plasma processing / Oxides / Chemical vapor deposition / Sputter deposition / Electrical resistivity and conductivity / Gallium nitride / Electron beam physical vapor deposition / Thin film / Chemistry / Thin film deposition / Semiconductor device fabrication


Bull. Mater. Sci., Vol. 27, No. 3, June 2004, pp. 295–301. © Indian Academy of Sciences. Studies on tin oxide films prepared by electron beam evaporation and
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Document Date: 2004-06-04 07:52:09


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City

Santos / Bangalore / New York / /

Company

Colen S 1981 Thin Solid Films / Golovanov V 2001 Thin Solid Films / Shieh J H 1983 Thin Solid Films / John Wiley and Sons Inc / Tesche B 1986 Thin Solid Films / Banerjee Ratnabali 1987 Thin Solid Films / Gangal S A / Valela J A 2002 Thin Solid Films / Chopra K L 1980 Thin Solid Films / Michalski C Z 1983 Thin Solid Films / Kulaszewicz S 1980 Thin Solid Films / E16 1214 Thangaraju B 2002 Thin Solid Films / Hitachi / Swanepoel R 1997 Thin Solid Films / /

Country

India / /

Facility

Bangalore University / Indian Institute of Science / /

IndustryTerm

vs energy / carrier concentration / final product / energy axis / vs energy graph / chemical deposition technique / chemical vapour deposition / gas sensors / resultant solution / vs energy plots / carrier gas pressure / optical energy band gap / chemical analysis / /

Organization

Indian Academy of Sciences / Indian Institute of Science / Bangalore / Bangalore University / Department of Physics / NARASIMHA RAO* Department of Instrumentation / /

Person

Van Heerden / Schroder / NARASIMHA RAO / /

Position

Shanthi *Author / /

Technology

radiation / semiconductors / X-ray / /

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