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s u r f a c e 8ciertoe ELSEVIER Surfaoe Science[removed][removed]Electron-phonon scattering rates in GaAs/A1GaAs 2DEG
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Document Date: 2005-07-22 15:44:52

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City

East Hartford / New Haven / /

Company

Takayama / United Technologies / O 1996 ElsevierScience B.V. / /

Country

United States / /

Currency

USD / /

Event

Business Partnership / /

Facility

United Technologies Research Center / Hall bar / Ohio State University / Yale University / /

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IndustryTerm

electron gas / electron-phonon energy relaxation rate / energy relaxation mechanism / energy relaxation rate / energy relaxation mechanisms / e - - / operative energy relaxation mechanism / metal film.~ / electron-phonon energy relaxation rates / 2DEG devices / energy escape / 2D electron gas / energy / /

OperatingSystem

Fermi / /

Organization

National Science Foundation / CornelL / Ohio State University / Yale University / /

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Position

R . N . / R.N. / Corresponding author / /

ProgrammingLanguage

Joule / /

ProvinceOrState

Connecticut / /

PublishedMedium

Physica B / /

Technology

Simulation / same chip / /

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