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AugustFDV303N Digital FET, N-Channel General Description
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Document Date: 2006-10-31 06:12:23
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File Size: 52,40 KB
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City
Coefficient /
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Company
Fairchild Semiconductor Corporation /
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IndustryTerm
compact portable electronic devices /
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Organization
U.S. Securities and Exchange Commission /
DC V /
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Position
N-Channel General /
nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward /
gFS Forward /
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Technology
oC -2 /
DMOS technology /
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SocialTag
Electronic design
Diode
Field-effect transistor
Surface-mount technology
Transconductance
Threshold voltage
Transistor
Power MOSFET
Electronic engineering
Electrical engineering