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Electronic design / Diode / Field-effect transistor / Surface-mount technology / Transconductance / Threshold voltage / Transistor / Power MOSFET / Electronic engineering / Electrical engineering / Electronics


AugustFDV303N Digital FET, N-Channel General Description
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Document Date: 2006-10-31 06:12:23

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File Size: 52,40 KB

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City

Coefficient / /

Company

Fairchild Semiconductor Corporation / /

IndustryTerm

compact portable electronic devices / /

Organization

U.S. Securities and Exchange Commission / DC V / /

Position

N-Channel General / nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward / gFS Forward / /

Technology

oC -2 / DMOS technology / /

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