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Field-effect transistor / Depletion and enhancement modes / Transistor / Transconductance / NXP Semiconductors / Threshold voltage / CMOS / FET amplifier / Electronic engineering / Electrical engineering / Electronics


Document Date: 2011-07-04 05:06:47

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Company

NXP B.V. / NXP Semiconductors / /

IndustryTerm

drain-source non-repetitive avalanche energy / automotive critical applications / avalanche energy / non-repetitive drain-source avalanche energy / /

Organization

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Position

General / diode forward / /

Technology

Field-Effect Transistor / plastic package using TrenchMOS technology / /

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