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![]() | Document Date: 2014-04-04 12:07:47Open Document File Size: 457,68 KBShare Result on FacebookCityWashington DC / The GaN / /CompanyTokyo Electron Yamanashi Ltd / Fuji Electric Co Ltd / Texas Instruments / New Japan Radio Co Ltd / /CountryJapan / /FacilityUniversity of Notre Dame / Kyoto University / Hong Kong University of Science / Sciences’ Institute of Microelectronics / Massachusetts Institute of Technology / IEDM109 Monolithic E/D MIS-HEMTs Hong Kong University of Science / /IndustryTermdifficult processing / technology sectors / power devices / non-alloyed titanium/gold metal / normally-off device / 3mm device / chemical vapor deposition / carrier densities / power switching devices / normally-on and normally-off devices / Manufacturing difficul / n-channel device / energy / power applications / metal-insulator-semiconductor / potential applications / lowplasma-enhanced chemical vapor deposition / chemical mechanical polishing / Particular devices / longer carrier lifetimes / power switching applications / metal stack / compact power handling systems / /OrganizationSciences’ Institute of Microelectronics / Chinese Academy of Sciences / mobiliTSMC’s Analog/Power & Specialty Technology Division / Hong Kong University of Science and Technology / Massachusetts Institute of Technology / Leibniz Institut für Höchstfrequenztechnik / Ferdinand-Braun-Institut / IQE / Kyoto University / University of Notre Dame / /PersonShu Yang / Mike Cooke / Yoshiyuki Yonezawa / /Positioncollector / freelance technology journalist / author / aluminium-doped p-type collector / /ProvinceOrStateMassachusetts / /Technologysemiconductor / bipolar transistor / X-ray / chemical mechanical polishing / High-voltage switching GaN technology / chemical vapor deposition / CMP / one chip / semiconductors / Dielectric / spectroscopy / CVD / /URLwww.semiconductor-today.com / /SocialTag |