| Document Date: 2012-01-30 04:32:45
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City Tokyo / / Country Japan / / Currency pence / / / Facility The University of Tokyo / Photon Factory / / IndustryTerm higher binding energy / energy positions / transition metal oxide materials / photon energy / energy resolutions / nitrogen gas pressure / energy / / Organization University of Tokyo / Tokyo / High Energy Accelerator Research Organization / Research Organization / Department of Applied Chemistry / / Technology semiconductor / spectroscopy / Radiation / dielectric / /
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Photon Factory Activity Report 2010 #28 Part BSurface and Interface 2C/2008S2-003 Effect of nitrogen bonding states on dipole at the HfSiO/SiON interface studied by