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Semiconductor devices / Computer memory / Threshold voltage / Gate oxide / Integrated circuits / Field-effect transistor / Transistor / Floating Gate MOSFET / Coulomb blockade / Electrical engineering / Electronics / Electronic engineering


Document Date: 2006-08-19 17:00:54

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City

Lausanne / New York / /

Company

Nanostructure Laboratory / Edward L. Ginzton Laboratory / Cray Research / /

Country

United States / /

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Facility

Nanostructure Laboratory / Stanford University / University of Minnesota / /

IndustryTerm

gate metal-oxide-semiconductor transistor / fluid systems / energy spacing / metal-oxide-semiconductor / electron charging energy / quantum energy spacing / graphics tools / chemical vapor deposition / manufacturing / thermal energy / electron quantum energy / microcontact printing / energy level spacing / /

Organization

Army Research Office / Defense Advanced Research Projects Agency / office of Naval Research / National Science Foundation / Stanford University / European Union / University of Minnesota / Minneapolis / National Fund for Scientific Research of Belgium / Department of Chemistry / /

Person

Stephen Y. Chou / Steven G. Boxer / Nick Ulman / A. Canning / /

ProgrammingLanguage

E / /

ProvinceOrState

Minnesota / California / New York / /

SportsLeague

Stanford University / /

Technology

semiconductor / lithography / field-effect transistor / integrated circuits / chemical vapor deposition / /

SocialTag