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Date: 2003-10-16 16:43:16 MOSFET Semiconductor devices Field-effect transistor Threshold voltage Short-channel effect Transistor Power electronics Charge carriers Carbon nanotubes Electrical engineering Electromagnetism Electronic engineering		Add to Reading List Source URL: www-tcad.stanford.edu Download Document from Source Website File Size: 205,44 KB Share Document on Facebook

	PACS №: 41.20.Gz, 84.30.Bv ∗ A.K.T. Assis and J.A. Hernandes† Instituto de F´ısica ‘Gleb Wataghin’ Universidade Estadual de Campinas – Unicamp DocID: 1rpZL - View Document
	EE 121 INTRO. TO ELECTRONIC DEVICES Materials and device structures for applications in analog and digital electronics. Topics include characteristics and basic circuits for diodes, field-effect transistors, bipolar jun DocID: 1rhUz - View Document
	PHYSICAL REVIEW B 80, 155307 共2009兲 Frequency dependence of the radiative decay rate of excitons in self-assembled quantum dots: Experiment and theory S. Stobbe,* J. Johansen, P. T. Kristensen, J. M. Hvam, and P. Lo DocID: 1rhBO - View Document
	Microsoft Word - Unit 2 Notes Prentice Hall.doc DocID: 1reoK - View Document
	PHYSICAL REVIEW B 77, 073303 共2008兲 Size dependence of the wavefunction of self-assembled InAs quantum dots from time-resolved optical measurements Jeppe Johansen,1,* Søren Stobbe,1 Ivan S. Nikolaev,2,3 Toke Lund-H DocID: 1raLw - View Document