ISSCCSESSION 30 EMERGING MEMORIESA 1Mb 28nm STT-MRAM with 2.8ns Read Access Time at 1.2V VDD Using Single-Cap Offset-Cancelled Sense Amplifier and In-situ Self-Write-Termination - Electronic effect - Document - PDFSEARCH.IO

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Date: 2018-05-16 15:46:39		ISSCCSESSION 30 / EMERGING MEMORIESA 1Mb 28nm STT-MRAM with 2.8ns Read Access Time at 1.2V VDD Using Single-Cap Offset-Cancelled Sense Amplifier and In-situ Self-Write-Termination Add to Reading List Source URL: blaauw.engin.umich.edu Download Document from Source Website File Size: 1,08 MB Share Document on Facebook