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Semiconductor devices / Multigate device / Semiconductors / MOSFET / Integrated circuits / Self-aligned gate / International Electron Devices Meeting / Transistor / Field-effect transistor / Electronic engineering / Electrical engineering / Technology


2320 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 47, NO. 12, DECEMBER 2000
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Document Date: 2013-03-23 21:28:54


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City

Tokyo / Hsinchu / Sagamihara / Cambridge / /

Company

Solid State Electronics / Computer Sciences / TSMC / NKK Corporation / Nippon Steel Corporation / Altera / Ge / Microfabrication Laboratory / Intel Corp. / AT&T Bell Laboratories / Lawrence Berkeley National Laboratory / Hitachi Ltd. / Central Research Laboratory / /

Country

Japan / Taiwan / United States / /

Currency

USD / /

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Event

Employment Change / Person Travel / /

Facility

Central Research Laboratory / Stanford University / National Tsing-Hua University / University of Tokyo / University of California / Microfabrication Laboratory / ULSI Development Center / Institute of Physics / Taiwan University / Institute of Electronics / The Ohio State University / Massachusetts Institute of Technology / /

IndustryTerm

process technologies / energy barrier / deep-submicron technologies / metal / quasi planar technology / planar device technology / nanoCMOS device / gate length device / quasiplanar device / low-temperature processing / ultrathin body devices / metal gate / ultra-shallow-junction device technology / semiconductor memory technologies / metal gates / photolithography technologies / ultrathin body device / fin devices / fin device / microelectronic devices / double-gate device / keV acceleration energy / width device / smallest device / /

NaturalFeature

MOSFET channel / /

Organization

Optical Society of America / Japan Society of Applied Physics / UC Berkeley / Institute of Electronics and Communication Engineers of Japan / Massachusetts Institute of Technology / National Tsing-Hua University / W.Y. Pan Foundation / Electronics Industry Alliance / American Physical Society / Institute of Electronics / Chinese Academy of Science / University of Tokyo / Tokyo / Department of Electrical Engineering and Computer Sciences / The Ohio State University / Taiwan University / Taipei / University of California / Berkeley / Institute of Physics / National Academy of Engineering / Stanford University / /

Person

H. S. Wong / J. P. McVittie / Kazuya Asano / Chair / J. R. Pfiester / K. C. Saraswat / J. King / Erik Anderson / Hideki Takeuchi / C. Kuo / Jeffrey Bokor / Jakub Kedzierski / C. Y. Yang / Jack A. Morton / Digh Hisamoto / Wen-Chin Lee / J. Bokor / C. Hu / Charles Kuo / /

Position

Circuit Designer / Chancellor / Research Associate / Professor / Senior Process Engineer / Editor / Professor of electrical engineering / Circuit Designer for VLSI / Professor of Microelectronics and Professor of electrical engineering / life honorary professor / Chair / D. J. / King / member / /

ProvinceOrState

California / Massachusetts / /

SportsLeague

Stanford University / /

Technology

X-ray / photolithography technologies / Information Technology / 0.1- m CMOS technology / planar device technology / ultra-shallow-junction device technology / Si-planar technology / semiconductor / quasi planar technology / lithography / deep-submicron technologies / semiconductor memory technologies / conventional planar MOSFET process technologies / dielectric / process technologies / simulation / CVD / /

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