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Semiconductor devices / Electronic design / Integrated circuits / Digital electronics / Logic families / MOSFET / Self-aligned gate / Threshold voltage / Field-effect transistor / Electronic engineering / Electrical engineering / Electromagnetism


IEEE JOURN.4L OF SOLID-ST.iTE CIRCUITS, VOL[removed]
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Document Date: 2009-01-23 22:37:34

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File Size: 1,57 MB

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City

Munich / /

Company

IBM / Vf / SINAP Siemens AG / Micropower Electronics / lllOSFET Authorized / Authorized / RCA / Siemens / /

Country

Germany / /

Currency

pence / USD / /

IndustryTerm

n-channel devices / lithographic new device / threshold device / clown device / silicon-gate technology / conventional and scaled-down devices / devices applications / carrier microscopic width / paper small device / Intrinsic carrier concentration / gate gate threshold strate device / design increasing devices / fabrication technologies / silicon-on-sapphire technology / /

NaturalFeature

Effective channel / /

Person

Michael Pomper / HWA-NIEN YU / ION-IMPLANTED DENN / Ion-Implanted Very / /

ProvinceOrState

New York / /

Technology

semiconductor / fabrication technologies / X-ray / Dielectric / lithography / %ubnanosecond SOS silicon-gate technology / simulation / silicon-on-sapphire technology / integrated circuits / /

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