<--- Back to Details
First PageDocument Content
Electronic design / Integrated circuits / Digital electronics / 45 nanometer / Nanoelectronics / CMOS / MOSFET / Transistor / Field-effect transistor / Electronic engineering / Technology / Electronics
Date: 2000-10-06 09:20:34
Electronic design
Integrated circuits
Digital electronics
45 nanometer
Nanoelectronics
CMOS
MOSFET
Transistor
Field-effect transistor
Electronic engineering
Technology
Electronics

Christie Marrian DARPA MTO DARPATech[removed]removed] DARPATech 2000

Add to Reading List

Source URL: archive.darpa.mil

Download Document from Source Website

File Size: 1,77 MB

Share Document on Facebook

Similar Documents

TECHNOLOGY OFFER OPTICAL DIODE Integrated optical circuits and sensitive optical components such as semiconductor laser diodes must be protected from back reflection. A conventional solution to this problem is Faraday op

DocID: 1vqOm - View Document

Synthetic Biology: Integrated Gene Circuits Nagarajan Nandagopal, et al. Science 333, ); DOI: scienceThis copy is for your personal, non-commercial use only.

DocID: 1vbsA - View Document

i AN EFFICIENT I/O AND CLOCK RECOVERY DESIGN FOR TERABIT INTEGRATED CIRCUITS A DISSERTATION

DocID: 1v27h - View Document

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, VOL. 26, NO. 7, JULYSynthesis of Timed Circuits Based on Decomposition Tomohiro Yoneda, Member, IEEE, and Chris J. Myers, Senior Mem

DocID: 1uNnn - View Document

1042 IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, VOL. 29, NO. 7, JULY 2010 Time-Stepping Numerical Simulation of Switched Circuits Within the Nonsmooth Dynamical

DocID: 1ut9H - View Document