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Electronic engineering / MOSFET / Threshold voltage / Field-effect transistor / Drain Induced Barrier Lowering / Transistor / Gate oxide / Electrical engineering / Semiconductor devices / Technology


A computationally efficient method for analytical calculation of potentials in undoped symmetric DG SOI MOSFET Oana Cobianu * and Manfred Glesner** Institute of Microelectronic Systems, Darmstadt University of Technology
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Document Date: 2012-06-27 17:11:59


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File Size: 644,96 KB

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