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Electrical engineering / Semiconductors / Short-channel effect / Transistor / Field-effect transistor / Electron mobility / Drain Induced Barrier Lowering / Channel length modulation / Power MOSFET / Electronic engineering / Technology / MOSFET


Compact model for ultra-short channel four-terminal DG MOSFETs for exploring circuit characteristics T. Nakagawa*, T. Sekigawa*, T. Tsutsumi**, M. Hioki*, E. Suzuki*, and H. Koike* * Electroinformatics Group,
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Document Date: 2011-11-18 13:54:24


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