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Power electronics / Semiconductor devices / Bipolar junction transistor / Insulated gate bipolar transistor / Transistor / MOSFET / Power semiconductor device / Linear regulator / Early effect / Electronic engineering / Electrical engineering / Electronics


Proceedings of the IEEE Power Electronics Specialists Conference Vancouver, BC, Canada, June 17-21, 2001 A Basic IGBT Model with Easy Parameter Extraction Peter O. Lauritzen University of Washington, Seattle, WA, USA (Aa
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Document Date: 2008-05-16 17:07:35

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File Size: 320,12 KB

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City

Vancouver / San Diego / /

Company

Diodes / Cox / Intersil / /

Country

Germany / United States / Canada / Denmark / /

Facility

Lauritzen University of Washington / Terminal Currents Gate / Aalborg University / Gert K. Andersen Aalborg University / University of Kiel / /

IndustryTerm

power devices / physical device / power semiconductor devices / carrier lifetime / compact model applications / /

Organization

University of Kiel / Aalborg University / PT V / University of Washington / Seattle / /

Person

Base Width / H. Alan Mantooth / Voltage Threshold / Martin Helsper / /

Position

parasitic series inductance Gate-Collector oxide capacitance Gate-Collector / high collector / collector / application engineer / dq Gate-collector / dt Collector / Professor Programme / left end / /

ProgrammingLanguage

MATLAB / BASIC / Hardware Description Language / /

ProvinceOrState

British Columbia / California / /

Technology

semiconductor / Semiconductor Devices / simulation / recombination / /

URL

http /

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