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Electrical engineering / Transistor / Short-channel effect / Field-effect transistor / Multigate device / Depletion region / Power electronics / Power MOSFET / Semiconductors / Technology / MOSFET / Electronic engineering


Compact model for ultra-short channel four-terminal DG MOSFETs for exploring circuit characteristics T. Nakagawa, T. Sekigawa, T. Tsutsumi*, M. Hioki, E. Suzuki, and H. Koike Electroinformatics Group, Nanoelectronics Res
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Document Date: 2005-05-23 13:18:26

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File Size: 167,60 KB

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Company

Suzuki / /

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Event

Patent Issuance / /

Facility

Nanoelectronics Research Institute National Institute of Advanced Industrial Science / terminal Operation Mode / Meiji University / terminal DG MOSFETs / /

NaturalFeature

Si channel / /

Organization

Meiji University / Nanoelectronics Research Institute National Institute of Advanced Industrial Science / Department of Computer Science / School of Science and Technology / /

Person

Double / /

Position

charge-sheet model / /

Technology

CMP / /

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