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Electronic design / MOSFET / Integrated circuits / Threshold voltage / Multigate device / CMOS / Field-effect transistor / Short-channel effect / Power MOSFET / Electrical engineering / Electronic engineering / Electromagnetism


Microsoft PowerPoint - WCM2010 [Compatibility Mode]
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Document Date: 2010-08-24 11:11:24


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File Size: 207,89 KB

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City

Bin Jie / Boston / Ning Lu / /

Company

IBM / /

Country

Singapore / United States / /

Facility

Technological University / University of Southern California/ISI / Technical University of Crete / Peking University / UniK/Norwegian University of Science / National Institute of Advanced Industrial Science / Norwegian University of Science / Arizona State University / /

MusicGroup

Sub / Sub Sub / Energy / /

NaturalFeature

Heavily Doped Channel / /

Organization

Technical University of Crete / Peking University / Norwegian University of Science / UniK/Norwegian University of Science and Technology / National Institute of Advanced Industrial Science and Technology / Arizona State University / University of Southern California / Norwegian University of Science and Technology / Technological University / /

Person

S. Uno / V / Xing Zhou / M. Reyboz / /

Position

Chair / Session Chair / Model / pm. Session Chair / /

ProgrammingLanguage

Verilog / L / /

ProvinceOrState

Southern California / Florida / /

Region

Southern California / /

Technology

45nm SOI technology / Verilog / /

SocialTag