Enhanced light output power and growth mechanism of GaN-based light-emitting diodes grown on cone-shaped SiO2 patterned template. 學生:陳政勤學號:

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Date: 2013-09-24 02:37:46 Chemistry Matter Crystallographic defects Optical materials Superhard materials Nitrides Gallium nitride Light-emitting diode Quantum efficiency Dislocation IQE Stacking fault		Enhanced light output power and growth mechanism of GaN-based light-emitting diodes grown on cone-shaped SiO2 patterned template. 學生:陳政勤學號: Add to Reading List Source URL: diamondprj.nctu.edu.tw Download Document from Source Website File Size: 868,25 KB Share Document on Facebook

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