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Extrinsic semiconductor / N-type semiconductor / Semiconductor / Intrinsic semiconductor / Electrical resistivity and conductivity / Band gap / Donor / Valence electron / Diode / Physics / Condensed matter physics / Charge carriers


JO H N BA R D E E N Semiconductor research leading to the point contact transistor Nobel Lecture, December 11, 1956
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Document Date: 2006-05-31 16:53:24


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Wilson / Pearson / Bell Laboratories / Shockley / Bell Telephone Laboratories / N BA R D E E N Semiconductor / H.B.V. / /

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United States / Sweden / /

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Purdue University / /

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Energy levels / energy band model / semiconductor technology / fruitful tool / semiconductor / electricity / energy-level diagram / energy gap / metal-semiconductor / electronic applications / chemical potential / electronic devices / metal-semiconductor rectifying contacts / chemical impurities present / carrier electron / thermal energy / electrostatic potential energy / metal semiconductor rectifying contact / minority carrier concentration / schematic energy-level diagram / chemical bonds / energy / /

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Forbidden / EC / Fig / Conduction / EV / /

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Fermi / /

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Purdue University / /

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Spenke / R. B. Gibney / H. R. Moore / C. Benedicks / /

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writer / general direction / physical chemist / co-worker / /

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semiconductor / semiconductors / semiconductor technology / dielectric / /

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