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Physics / Interstitial defect / Electron paramagnetic resonance / Silicon carbide / Frenkel defect / Spin / Chemistry / Materials science / Crystallographic defects


INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF PHYSICS: CONDENSED MATTER J. Phys.: Condens. Matter[removed]–12440
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Document Date: 2009-10-04 14:33:00

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Pittsburgh / Paris / /

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IOP Publishing Ltd / Silicon Carbide / Intel Corporation / /

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United Kingdom / Singapore / /

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INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF PHYSICS / V Ya Bratus’ Institute of Semiconductor Physics / National Taras Shevchenko University of Kyiv / /

IndustryTerm

significantly lower formation energy / substitutional site / thermal and chemical stability / energy gain / lowest formation energy / formation energy ranges / energy minimization / suitable tools / electronic applications / device processing technology / carbon substitutional site / chemical bonds / energy / /

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Fermi / /

Organization

National Taras Shevchenko University of Kyiv / Information Computer Centre / Ya Bratus’ Institute of Semiconductor Physics / /

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Ya Bratus / /

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Teller / /

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STO-3G / /

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Missouri / /

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Physica B / /

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semiconductor / Radiation / simulation / 3G / device processing technology / /

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