Ultra-low power FinFET based SRAM cell employing sharing current concept

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Date: 2016-02-06 01:01:32 Electrical engineering Electronic engineering Electromagnetism Digital electronics Computer memory Logic families Static random-access memory Electronic design Subthreshold conduction Memory cell Transistor Threshold voltage		Ultra-low power FinFET based SRAM cell employing sharing current concept Add to Reading List Source URL: moimani.weebly.com Download Document from Source Website File Size: 2,72 MB Share Document on Facebook

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