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Date: 2015-05-17 22:51:54Chemistry Matter Thin film deposition Semiconductor device fabrication Metalorganic vapour phase epitaxy Atomic layer deposition Nucleation Indium nitride Grain boundary Molybdenum disulfide | SUPPLEMENTARY INFORMATION doi:nature14417 SUPPLEMENTARY METHODS MOCVD growth of ML MoS2 and WS2 films. As illustrated in Fig. 2a, the synthesis of MLAdd to Reading ListSource URL: park.chem.cornell.eduDownload Document from Source WebsiteFile Size: 1,68 MBShare Document on Facebook |
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