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RELIABILITY OF GaN/AlGaN HEMT MMIC TECHNOLOGY ON 100-mm 4H-SiC Donald A. Gajewski, Scott Sheppard, Tina McNulty, Jeff B. Barner, Jim Milligan and John Palmour Cree Inc., 4600 Silicon Dr., Durham, NC[removed]Don_Gajewski@Cr
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Document Date: 2014-05-08 11:27:12


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City

Durham / /

Company

GaN HEMT / Compound Semiconductors / Cree Inc. / JEDEC Solid Technology / John Palmour Cree Inc. / /

Country

United States / /

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IndustryTerm

process technologies / metal / volume manufacturing / metalorganic chemical vapor deposition / source metal / transistor technology / mm wafer process technology / explosive device / process technology / industrial applications / gold interconnect metal / large periphery device / source metal intermixing / defense applications / activation energy / /

Organization

JEDEC Solid Technology Association / /

Person

Scott Sheppard / Tina McNulty / Donald A. Gajewski / Jeff B. Barner / Jim Milligan / /

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Product

CGH40010 / GaN HEMT MMIC / /

ProgrammingLanguage

DC / /

ProvinceOrState

North Carolina / /

Technology

100 mm wafer process technology / AlGaN HEMT MMIC process technology / V3 process technology / RF technologies / dielectric / Qualification The G28V3 process technology / process technologies / G28V3 process technology / transistor technology / process technology / MMIC process technology / chemical vapor deposition / /

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