H. L. Cotal D. D. / S. Bank / Aonex Technologies / Thomas J. Watson Laboratory / Air Force Research Laboratory / Ge / J. M. Zahler S. P. / A. Ptak / National Renewable Energy Laboratory / /
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USD / / /
Event
Product Issues / /
Facility
American Institute of Physics Downloaded / Air Force Research Laboratory / National Renewable Energy Laboratory / Walter Schottky Institute / Thomas J. Watson Laboratory of Applied Physics / California Institute of Technology / American Institute of Physics / /
IndustryTerm
carrier type / band gap energy / optoelectronic devices / solar cell applications / energy conversion efficiency / wet chemical cleaning / wet chemical etch / target carrier concentration / metal-organic chemical-vapor deposition / imaging / energy / /
Organization
California Institute of Technology / American Institute of Physics Downloaded / American Institute of Physics / Walter Schottky Institute / /
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Tom Pinnington / W. E. McMahon / J. M. Olson / A. Duda / Anna Fontcuberta / D. J. Friedman / James M. Zahler / J. S. Harris / H. Yuen / J. T. Kiehl / S. R. Kurtz / T. E. Moriarty / R. A. Sherif / M. Wistey / /
APPLIED PHYSICS LETTERS 91, 012108 共2007兲 High efficiency InGaAs solar cells on Si by InP layer transfer James M. Zahler Aonex Technologies, Pasadena, California 91106