DEVELOPMENT OF (Al)GaN RECESS ETCH FOR EMODE POWER HEMTs G. MANNAERT, V. PARASCHIV, B. DE JAEGER, M. VAN HOVE, M. DEMAND, S. DECOUTERE, W. BOULLART IMEC, KAPELDREEF 75, LEUVEN, B-3000, BELGIUM © IMECCONFIDENTIA

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Date: 2012-05-24 09:13:54 Gallium nitride IMEC Ohmic contact Aluminium gallium nitride Light-emitting diode Gan Chinese BCL3 Sulfur hexafluoride Chemistry Nitrides Semiconductor device fabrication		DEVELOPMENT OF (Al)GaN RECESS ETCH FOR EMODE POWER HEMTs G. MANNAERT, V. PARASCHIV, B. DE JAEGER, M. VAN HOVE, M. DEMAND, S. DECOUTERE, W. BOULLART IMEC, KAPELDREEF 75, LEUVEN, B-3000, BELGIUM © IMECCONFIDENTIA Add to Reading List Source URL: www.leti.fr Download Document from Source Website File Size: 662,17 KB Share Document on Facebook

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