![Gallium nitride / IMEC / Ohmic contact / Aluminium gallium nitride / Light-emitting diode / Gan Chinese / BCL3 / Sulfur hexafluoride / Chemistry / Nitrides / Semiconductor device fabrication Gallium nitride / IMEC / Ohmic contact / Aluminium gallium nitride / Light-emitting diode / Gan Chinese / BCL3 / Sulfur hexafluoride / Chemistry / Nitrides / Semiconductor device fabrication](https://www.pdfsearch.io/img/db617449455b4d87d1a133b4461fbc9d.jpg) Date: 2012-05-24 09:13:54Gallium nitride IMEC Ohmic contact Aluminium gallium nitride Light-emitting diode Gan Chinese BCL3 Sulfur hexafluoride Chemistry Nitrides Semiconductor device fabrication | | DEVELOPMENT OF (Al)GaN RECESS ETCH FOR EMODE POWER HEMTs G. MANNAERT, V. PARASCHIV, B. DE JAEGER, M. VAN HOVE, M. DEMAND, S. DECOUTERE, W. BOULLART IMEC, KAPELDREEF 75, LEUVEN, B-3000, BELGIUM © IMECCONFIDENTIAAdd to Reading ListSource URL: www.leti.frDownload Document from Source Website File Size: 662,17 KBShare Document on Facebook
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