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Date: 2016-05-02 12:05:17Emerging technologies Chemical elements Memristor Resistive random-access memory Tantalum pentoxide Tantalum Oxide Oxygen Tantalum capacitor | Science Highlight – April 2016 Observing Oxygen Atoms Move during Information Storage in Tantalum Oxide MemristorsAdd to Reading ListSource URL: ssrl.slac.stanford.eduDownload Document from Source WebsiteFile Size: 80,13 KBShare Document on Facebook |
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Science Highlight – April 2016 Observing Oxygen Atoms Move during Information Storage in Tantalum Oxide MemristorsDocID: 1pKbr - View Document |