<--- Back to Details
First PageDocument Content
Digital electronics / Logic families / Integrated circuits / Microtechnology / Silicon on insulator / CMOS / Gallium nitride / MOSFET / Soitec
Date: 2016-08-18 14:30:09
Digital electronics
Logic families
Integrated circuits
Microtechnology
Silicon on insulator
CMOS
Gallium nitride
MOSFET
Soitec

F r a u n h o f e r I n s t i t u t e f o r Mic r o e l e c t r o n ic C i r c u i t s a n d S y s t e m s Programme Inter Carnot Fraunhofer HOTMOS High temperature SOI CMOS technology platform for applications up to 25

Add to Reading List

Source URL: www.ims.fraunhofer.de

Download Document from Source Website

File Size: 1,88 MB

Share Document on Facebook

Similar Documents

2016 General Europractice MPW runs Schedule and Prices Accessible for universities, research institutes and companies Version– v15 www.europractice-ic.com Dear customer,

2016 General Europractice MPW runs Schedule and Prices Accessible for universities, research institutes and companies Version– v15 www.europractice-ic.com Dear customer,

DocID: 1r4CM - View Document

ISSN No: International Journal & Magazine of Engineering, Technology, Management and Research A Peer Reviewed Open Access International Journal

ISSN No: International Journal & Magazine of Engineering, Technology, Management and Research A Peer Reviewed Open Access International Journal

DocID: 1r4h4 - View Document

D:� Will WK table� CSP design proposal�FN 8L 1.0x1.2mm 0.4P FC LF and POD (PA82)�FN 8L 1.0x1.2mm 0.4P FC LF and POD

D: Will WK table CSP design proposalFN 8L 1.0x1.2mm 0.4P FC LF and POD (PA82)FN 8L 1.0x1.2mm 0.4P FC LF and POD

DocID: 1r3oc - View Document

CMOS VLSI DESIGN 4TH EDITION SOLUTION 6 Jan, 2016 | BOOM-PDF-CVD4ES-7-4 | 39 Page | File Size 2,467 KB COPYRIGHT 2016, ALL RIGHT RESERVED

CMOS VLSI DESIGN 4TH EDITION SOLUTION 6 Jan, 2016 | BOOM-PDF-CVD4ES-7-4 | 39 Page | File Size 2,467 KB COPYRIGHT 2016, ALL RIGHT RESERVED

DocID: 1qVKD - View Document

Ultra-low power FinFET based SRAM cell employing sharing current concept

Ultra-low power FinFET based SRAM cell employing sharing current concept

DocID: 1qOFd - View Document