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Chemistry / Matter / Thin film deposition / Semiconductor device fabrication / Metalorganic vapour phase epitaxy / Atomic layer deposition / Nucleation / Indium nitride / Grain boundary / Molybdenum disulfide
Date: 2015-05-17 22:51:54
Chemistry
Matter
Thin film deposition
Semiconductor device fabrication
Metalorganic vapour phase epitaxy
Atomic layer deposition
Nucleation
Indium nitride
Grain boundary
Molybdenum disulfide

SUPPLEMENTARY INFORMATION doi:nature14417 SUPPLEMENTARY METHODS MOCVD growth of ML MoS2 and WS2 films. As illustrated in Fig. 2a, the synthesis of ML

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