Macmillan Publishers Limited. / ACS / S. Sa / vF / Foster A. S. / /
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Netherlands / Guinea / United Kingdom / Singapore / Finland / / /
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Product Issues / /
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National University of Singapore / Aalto University / Radboud University of Nijmegen / University of Helsinki / /
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carrier concentration / high adsorption energy / eld-effect devices / chemical derivative8 / accessible carrier densities nE2 / carrier drift / high chemical reactivity / carrier concentrations / factor limiting carrier mobility / carrier density / adsorption energy / metal-insulator transition / sufficiently high carrier concentrations / software package / energy / energy band / energy position / hybrid magnetic systems / calculated energy dependence / graphene devices / individual gas molecules / spintronics applications / corresponding carrier concentrations / /
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Fermi / DOS / /
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Aalto University / Manchester Centre for Mesoscience and Nanotechnology / National University of Singapore / Department of Physics / Institute for Molecules and Materials / Academy of Finland / University of Nijmegen / Graphene Research Centre / University of Helsinki / Department of Applied Physics / UK Engineering and Physical Sciences Research Council / /
ARTICLE Received 12 Mar 2013 | Accepted 15 May 2013 | Published 12 Jun 2013 DOI: [removed]ncomms3010 Dual origin of defect magnetism in graphene