SISPAD 2012, September 5-7, 2012, Denver, CO, USA A Physical Model to Predict Grain Boundary Induced Transistor Threshold Voltage Variation in Poly-Si TFTs Chih-Hsiang Ho, Georgios D. Panagopoulos, Chao Lu and Kaushik R - Höðr - Document - PDFSEARCH.IO

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	SISPAD 2012, September 5-7, 2012, Denver, CO, USA A Physical Model to Predict Grain Boundary Induced Transistor Threshold Voltage Variation in Poly-Si TFTs Chih-Hsiang Ho, Georgios D. Panagopoulos, Chao Lu and Kaushik R Add to Reading List Document Date: 2013-02-12 08:39:06 Open Document File Size: 691,38 KB Share Result on Facebook

SISPAD 2012, September 5-7, 2012, Denver, CO, USA A Physical Model to Predict Grain Boundary Induced Transistor Threshold Voltage Variation in Poly-Si TFTs Chih-Hsiang Ho, Georgios D. Panagopoulos, Chao Lu and Kaushik RAdd to Reading List