Cambridge University Press / Thomas J. Watson Laboratories / vF / Microelectronics Advanced Research Corporation / /
Country
Guinea / United States / Korea / South Korea / /
Currency
USD / / /
Facility
American Institute of Physics Downloaded / Korea Advanced Institute of Science / California Institute of Technology / American Institute of Physics / Beckman Institute / /
IndustryTerm
order symplectic integrator / graphene-based electronic devices / graphene systems / low energy / analytical solutions / optical systems / plane wave solutions / graphene electronics / device applications / dielectric media / horizontal energy flow / electron energy / optical media / energy / /
OperatingSystem
Fermi / /
Organization
UCLA / California Institute of Technology / Cambridge University / American Institute of Physics Downloaded / Graduate School / Materials and Process Simulation Center / American Institute of Physics / Korea Advanced Institute of Science and Technology / Beckman Institute / Center for Materials Simulations and Design / /
Person
Min Seok Jang / William A. Goddard / Nat / Kang Wang / /
APPLIED PHYSICS LETTERS 97, 043504 共2010兲 Time dependent behavior of a localized electron at a heterojunction boundary of graphene Min Seok Jang,1 Hyungjun Kim,2,3 Harry A. Atwater,1,a兲 and William A. Goddard III2