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Chemistry / Materials science / Epitaxy / MOSFET / Solar cell / Amorphous silicon / Chemical vapor deposition / Heterojunction / Thin film solar cell / Semiconductor device fabrication / Technology / Thin film deposition


EFFECT OF DEFECT-RICH EPITAXY ON CRYSTALLINE SILICON / AMORPHOUS SILICON HETEROJUNCTION SOLAR CELLS AND THE USE OF LOW-MOBILITY LAYERS TO IMPROVE PEFORMANCE Michael G. Deceglie and Harry A. Atwater Thomas J. Watson Labor
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Document Date: 2012-04-18 11:56:03


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City

Pasadena / /

Company

A. Atwater Thomas J. Watson Laboratories / BP / DARPA / Thin Solid Films / /

Event

Product Issues / /

Facility

Applied Physics California Institute of Technology / /

IndustryTerm

hot-wire chemical vapor deposition / carrier transport equations / increased carrier flow / overall energy conversion efficiency / device technology / carrier lifetime / carrier collection / chemical vapor deposition / hot-wire chemical vapor / lateral carrier flow / carrier generation profile / minority carrier type / model devices / carrier lifetime measurements / carrier mobility / /

OperatingSystem

Fermi / /

Organization

California Institute of Technology / /

Person

Michael D. Kelzenberg / Daniel B. Turner-Evans / Andrey D. Poletayev / /

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Product

crystalline regions / epitaxial regions We / epitaxial layer increases / pinhole / epitaxial regions / epitaxial region / c-Si layer / epitaxy / pinhole-like structures / pinholes / performance / pinhole regions / case / /

Technology

SIMULATION / device technology / recombination / chemical vapor deposition / /

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