Leuven / Madrid / Antwerpen / London / Wiley / Rappaport / /
Company
on Semiconductor / World Scientific / J. G. Tischler A. S. / Narrow-Gap Semiconductors / /
Country
Belgium / United Kingdom / Spain / /
Facility
Lancaster University / /
IndustryTerm
electron ground state energy / bulk band gap energy / interaction energy dependence / lowest confinement energy / lower zero point energy / exciton energy state corresponding / carrier confinement / exciton energy shift / exciton energy / energy dependent electron mass mnonp.e / point energy / reflection high-energy electron diffraction / energy decrease / low-energy peak originating / interaction energy / device applications / low-energy / optical applications / energy / /
MusicGroup
Fig / Valence / /
Organization
Lancaster University / Institute for Nanoscale Physics and Chemistry / European Commission / Institute for Nanoscale Physics / Flemish Science Foundation / /
Person
K. L. Janssens / Calvin Yi-Ping Chao / J. Appl / Isaac Newton / J. M. García / Y. González / B. Partoens / J. P. Kotthaus / V / D. Fuster / S. L. Chuang / F. M. Peeters / M. U. González / J. Martínez-Pastor / L. González / V. V. Moshchalkov / / /
PHYSICAL REVIEW B 76, 195320 共2007兲 Exciton confinement in InAsÕ InP quantum wires and quantum wells in the presence of a magnetic field Y. Sidor,1 B. Partoens,1 F. M. Peeters,1 J. Maes,2 M. Hayne,3 D. Fuster,4 Y.