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Gallium nitride / IMEC / Ohmic contact / Aluminium gallium nitride / Light-emitting diode / Gan Chinese / BCL3 / Sulfur hexafluoride / Chemistry / Nitrides / Semiconductor device fabrication


DEVELOPMENT OF (Al)GaN RECESS ETCH FOR EMODE POWER HEMTs G. MANNAERT, V. PARASCHIV, B. DE JAEGER, M. VAN HOVE, M. DEMAND, S. DECOUTERE, W. BOULLART IMEC, KAPELDREEF 75, LEUVEN, B-3000, BELGIUM © IMEC[removed]CONFIDENTIA
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Document Date: 2012-05-24 09:13:54

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Company

Ti/TiN Ohmic Metal / /

Country

Belgium / /

Currency

pence / /

IndustryTerm

consumer electronics / /

Person

G. MANNAERT / V / M. VAN HOVE / /

ProgrammingLanguage

DC / /

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