INAS

Results: 161



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41Mater.Phys.MechHETEROEPITAXIAL GROWTH OF InAs ON Si: THE NEW TYPE OF QUANTUM DOTS G.E. Cirlin1,2, N.K. Polyakov1,2, V.N. Petrov1, V.A. Egorov1, D.V. Denisov2, B.V. Volovik2, V.M. Ustinov2, Zh.I. Alferov2

Mater.Phys.MechHETEROEPITAXIAL GROWTH OF InAs ON Si: THE NEW TYPE OF QUANTUM DOTS G.E. Cirlin1,2, N.K. Polyakov1,2, V.N. Petrov1, V.A. Egorov1, D.V. Denisov2, B.V. Volovik2, V.M. Ustinov2, Zh.I. Alferov2

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Source URL: www.ipme.ru

Language: English - Date: 2012-02-13 16:42:16
    42Diameter-dependent conductance of InAs nanowires Marc Scheffler, Stevan Nadj-Perge, Leo P. Kouwenhoven, Magnus T. Borgström, and Erik P. A. M. Bakkers Citation: J. Appl. Phys. 106, ); doi:

    Diameter-dependent conductance of InAs nanowires Marc Scheffler, Stevan Nadj-Perge, Leo P. Kouwenhoven, Magnus T. Borgström, and Erik P. A. M. Bakkers Citation: J. Appl. Phys. 106, ); doi:

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    Source URL: kouwenhovenlab.tudelft.nl

    Language: English - Date: 2012-01-11 09:52:30
    43Supplementary Material Section 1: E-beam lithography, gold deposition and lift-off were used to prepare the 25x25 gold droplet arrays. “Standard” InP-InAs stems were grown in the MOVPE reactor at 420°C. InP(111)B

    Supplementary Material Section 1: E-beam lithography, gold deposition and lift-off were used to prepare the 25x25 gold droplet arrays. “Standard” InP-InAs stems were grown in the MOVPE reactor at 420°C. InP(111)B

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    Source URL: kouwenhovenlab.tudelft.nl

    Language: English - Date: 2013-10-31 05:07:25
    44APPLIED PHYSICS LETTERS 99, Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness Kuniharu Takei,1,2,3 Steven Chuang,1,2,3 Hui Fang,1,2,3 Rehan Kapadi

    APPLIED PHYSICS LETTERS 99, Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness Kuniharu Takei,1,2,3 Steven Chuang,1,2,3 Hui Fang,1,2,3 Rehan Kapadi

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    Source URL: nano.eecs.berkeley.edu

    Language: English - Date: 2011-09-08 10:47:33
      45JOURNAL OF APPLIED PHYSICS 114, Two-dimensional to three-dimensional tunneling in InAs/AlSb/GaSb quantum well heterojunctions Yuping Zeng,1,2 Chien-I Kuo,1 Rehan Kapadia,1,2 Ching-Yi Hsu,1 Ali Javey,1,2,a)

      JOURNAL OF APPLIED PHYSICS 114, Two-dimensional to three-dimensional tunneling in InAs/AlSb/GaSb quantum well heterojunctions Yuping Zeng,1,2 Chien-I Kuo,1 Rehan Kapadia,1,2 Ching-Yi Hsu,1 Ali Javey,1,2,a)

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      Source URL: nano.eecs.berkeley.edu

      Language: English - Date: 2013-07-09 14:04:19
        46SEATS BREAK-UP AS PER NEW MECHANISM (FOR 2015 – 2017 SESSION) SUBJECTS(Group) 60% from C.U. Candidates passed inas per Merit) 40% from all others candidates (as per result of entrance)

        SEATS BREAK-UP AS PER NEW MECHANISM (FOR 2015 – 2017 SESSION) SUBJECTS(Group) 60% from C.U. Candidates passed inas per Merit) 40% from all others candidates (as per result of entrance)

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        Source URL: www.caluniv-ucsta.net

        Language: English - Date: 2015-08-18 00:21:38
          47J12TE4 SERIES TE COOLED INAS DETECTORS Operating Instructions Typical Spectral Response

          J12TE4 SERIES TE COOLED INAS DETECTORS Operating Instructions Typical Spectral Response

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          Source URL: www.judsontechnologies.com

          Language: English - Date: 2008-07-07 18:15:47
            48SEATS BREAK-UP AS PER NEW MECHANISM (FOR 2015 – 2017 SESSION) SUBJECTS(Group) 60% from C.U. Candidates passed inas per Merit) 40% from all others candidates (as per result of entrance)

            SEATS BREAK-UP AS PER NEW MECHANISM (FOR 2015 – 2017 SESSION) SUBJECTS(Group) 60% from C.U. Candidates passed inas per Merit) 40% from all others candidates (as per result of entrance)

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            Source URL: www.caluniv-ucsta.net

            Language: English - Date: 2015-08-18 00:14:19
              49SISPAD 2012, September 5-7, 2012, Denver, CO, USA Analysis of tunneling characteristics through hetero interface of InAs/Si nanowire tunneling field effect transistors Yasuaki Miyoshi, Matsuto Ogawa,

              SISPAD 2012, September 5-7, 2012, Denver, CO, USA Analysis of tunneling characteristics through hetero interface of InAs/Si nanowire tunneling field effect transistors Yasuaki Miyoshi, Matsuto Ogawa,

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              Source URL: in4.iue.tuwien.ac.at

              Language: English - Date: 2013-02-12 08:39:12
                50APPLIED PHYSICS LETTERS 102, High quality interfaces of InAs-on-insulator field-effect transistors with ZrO2 gate dielectrics Kuniharu Takei,1,2,3 Rehan Kapadia,1,2,3 Hui Fang,1,2,3 E. Plis,4 Sanjay Krishn

                APPLIED PHYSICS LETTERS 102, High quality interfaces of InAs-on-insulator field-effect transistors with ZrO2 gate dielectrics Kuniharu Takei,1,2,3 Rehan Kapadia,1,2,3 Hui Fang,1,2,3 E. Plis,4 Sanjay Krishn

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                Source URL: nano.eecs.berkeley.edu

                Language: English - Date: 2013-04-19 20:11:41