41![Mater.Phys.MechHETEROEPITAXIAL GROWTH OF InAs ON Si: THE NEW TYPE OF QUANTUM DOTS G.E. Cirlin1,2, N.K. Polyakov1,2, V.N. Petrov1, V.A. Egorov1, D.V. Denisov2, B.V. Volovik2, V.M. Ustinov2, Zh.I. Alferov2 Mater.Phys.MechHETEROEPITAXIAL GROWTH OF InAs ON Si: THE NEW TYPE OF QUANTUM DOTS G.E. Cirlin1,2, N.K. Polyakov1,2, V.N. Petrov1, V.A. Egorov1, D.V. Denisov2, B.V. Volovik2, V.M. Ustinov2, Zh.I. Alferov2](https://www.pdfsearch.io/img/fd5ef8970be8d16cd3da0a3f544d6d44.jpg) | Add to Reading ListSource URL: www.ipme.ruLanguage: English - Date: 2012-02-13 16:42:16
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42![Diameter-dependent conductance of InAs nanowires Marc Scheffler, Stevan Nadj-Perge, Leo P. Kouwenhoven, Magnus T. Borgström, and Erik P. A. M. Bakkers Citation: J. Appl. Phys. 106, ); doi: Diameter-dependent conductance of InAs nanowires Marc Scheffler, Stevan Nadj-Perge, Leo P. Kouwenhoven, Magnus T. Borgström, and Erik P. A. M. Bakkers Citation: J. Appl. Phys. 106, ); doi:](https://www.pdfsearch.io/img/06c92783ebfab16ca5930fd4c5766516.jpg) | Add to Reading ListSource URL: kouwenhovenlab.tudelft.nlLanguage: English - Date: 2012-01-11 09:52:30
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43![Supplementary Material Section 1: E-beam lithography, gold deposition and lift-off were used to prepare the 25x25 gold droplet arrays. “Standard” InP-InAs stems were grown in the MOVPE reactor at 420°C. InP(111)B Supplementary Material Section 1: E-beam lithography, gold deposition and lift-off were used to prepare the 25x25 gold droplet arrays. “Standard” InP-InAs stems were grown in the MOVPE reactor at 420°C. InP(111)B](https://www.pdfsearch.io/img/728b1eb30e4a84f4424dec96f58d0d14.jpg) | Add to Reading ListSource URL: kouwenhovenlab.tudelft.nlLanguage: English - Date: 2013-10-31 05:07:25
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44![APPLIED PHYSICS LETTERS 99, Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness Kuniharu Takei,1,2,3 Steven Chuang,1,2,3 Hui Fang,1,2,3 Rehan Kapadi APPLIED PHYSICS LETTERS 99, Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness Kuniharu Takei,1,2,3 Steven Chuang,1,2,3 Hui Fang,1,2,3 Rehan Kapadi](https://www.pdfsearch.io/img/7c9481a0f91014cc7a8962feed1bcd94.jpg) | Add to Reading ListSource URL: nano.eecs.berkeley.eduLanguage: English - Date: 2011-09-08 10:47:33
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45![JOURNAL OF APPLIED PHYSICS 114, Two-dimensional to three-dimensional tunneling in InAs/AlSb/GaSb quantum well heterojunctions Yuping Zeng,1,2 Chien-I Kuo,1 Rehan Kapadia,1,2 Ching-Yi Hsu,1 Ali Javey,1,2,a) JOURNAL OF APPLIED PHYSICS 114, Two-dimensional to three-dimensional tunneling in InAs/AlSb/GaSb quantum well heterojunctions Yuping Zeng,1,2 Chien-I Kuo,1 Rehan Kapadia,1,2 Ching-Yi Hsu,1 Ali Javey,1,2,a)](https://www.pdfsearch.io/img/1e70ff87f4b7527287135947b91a56ef.jpg) | Add to Reading ListSource URL: nano.eecs.berkeley.eduLanguage: English - Date: 2013-07-09 14:04:19
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46![SEATS BREAK-UP AS PER NEW MECHANISM (FOR 2015 – 2017 SESSION) SUBJECTS(Group) 60% from C.U. Candidates passed inas per Merit) 40% from all others candidates (as per result of entrance) SEATS BREAK-UP AS PER NEW MECHANISM (FOR 2015 – 2017 SESSION) SUBJECTS(Group) 60% from C.U. Candidates passed inas per Merit) 40% from all others candidates (as per result of entrance)](https://www.pdfsearch.io/img/fe50c6cd73b27d5978cfaed8ebfa84ce.jpg) | Add to Reading ListSource URL: www.caluniv-ucsta.netLanguage: English - Date: 2015-08-18 00:21:38
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47![J12TE4 SERIES TE COOLED INAS DETECTORS Operating Instructions Typical Spectral Response J12TE4 SERIES TE COOLED INAS DETECTORS Operating Instructions Typical Spectral Response](https://www.pdfsearch.io/img/f1d8255fef529f35fbdecaef68a9785b.jpg) | Add to Reading ListSource URL: www.judsontechnologies.comLanguage: English - Date: 2008-07-07 18:15:47
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48![SEATS BREAK-UP AS PER NEW MECHANISM (FOR 2015 – 2017 SESSION) SUBJECTS(Group) 60% from C.U. Candidates passed inas per Merit) 40% from all others candidates (as per result of entrance) SEATS BREAK-UP AS PER NEW MECHANISM (FOR 2015 – 2017 SESSION) SUBJECTS(Group) 60% from C.U. Candidates passed inas per Merit) 40% from all others candidates (as per result of entrance)](https://www.pdfsearch.io/img/32356d3650aa66b95174450f3def47f7.jpg) | Add to Reading ListSource URL: www.caluniv-ucsta.netLanguage: English - Date: 2015-08-18 00:14:19
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49![SISPAD 2012, September 5-7, 2012, Denver, CO, USA Analysis of tunneling characteristics through hetero interface of InAs/Si nanowire tunneling field effect transistors Yasuaki Miyoshi, Matsuto Ogawa, SISPAD 2012, September 5-7, 2012, Denver, CO, USA Analysis of tunneling characteristics through hetero interface of InAs/Si nanowire tunneling field effect transistors Yasuaki Miyoshi, Matsuto Ogawa,](https://www.pdfsearch.io/img/3f9b2c5de0bdf0ccb96fa9d1866f7bf7.jpg) | Add to Reading ListSource URL: in4.iue.tuwien.ac.atLanguage: English - Date: 2013-02-12 08:39:12
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50![APPLIED PHYSICS LETTERS 102, High quality interfaces of InAs-on-insulator field-effect transistors with ZrO2 gate dielectrics Kuniharu Takei,1,2,3 Rehan Kapadia,1,2,3 Hui Fang,1,2,3 E. Plis,4 Sanjay Krishn APPLIED PHYSICS LETTERS 102, High quality interfaces of InAs-on-insulator field-effect transistors with ZrO2 gate dielectrics Kuniharu Takei,1,2,3 Rehan Kapadia,1,2,3 Hui Fang,1,2,3 E. Plis,4 Sanjay Krishn](https://www.pdfsearch.io/img/40e2c0bbdf63288118075172c72a1b60.jpg) | Add to Reading ListSource URL: nano.eecs.berkeley.eduLanguage: English - Date: 2013-04-19 20:11:41
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