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Indium gallium nitride / 2DEG / Indium nitride / Heterojunction / Electron mobility / High electron mobility transistor / Metalorganic vapour phase epitaxy / Transistor / Aluminium gallium nitride / Chemistry / Nitrides / Gallium nitride


CS_ad_213x282mm_semiconductor_today_feb14.indd
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Document Date: 2015-02-27 10:59:53

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